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| Inchange Semiconductor Product Specification Silicon NPN Power Transistors DESCRIPTION With TO-3 package High voltage ;fast switching speed Low saturation voltage APPLICATIONS Switching-mode power supplies ,CRT scanning,inverters,and other industrial applications PINNING(see fig.2) PIN 1 2 3 Base Emitter DESCRIPTION BUX81 Fig.1 simplified outline (TO-3) and symbol Collector ABSOLUTE MAXIMUM RATINGS(Ta=25ae ) SYMBOL VCBO VCEO VEBO IC ICM IB IBM PT Tj Tstg Collector-base voltage PARAMETER Collector-emitter voltage INC Emitter-base voltage Collector current E SEM ANG H Open base Open emitter OND IC CONDITIONS TOR UC VALUE 1000 450 10 10 15 4 6 UNIT V V V A A A A W ae ae Open collector Collector current-peak Base current Base current-peak Total power dissipation Junction temperature Storage temperature TC=25ae 150 200 -65~200 THERMAL CHARACTERISTICS SYMBOL Rth j-C PARAMETER Thermal resistance junction to case MAX 1.17 UNIT ae /W Inchange Semiconductor Product Specification Silicon NPN Power Transistors CHARACTERISTICS Tj=25ae unless otherwise specified PARAMETER Collector-emitter sustaining voltage Collector-emitter saturation voltage Collector-emitter saturation voltage Base-emitter saturation voltage Base-emitter saturation voltage Collector cut-off current Emitter cut-off current DC current gain CONDITIONS IC=0.1A; L=25mH IC=5 A;IB=1 A IC=8 A;IB=2.5 A IC=5 A;IB=1 A IC=8 A;IB=2.5 A VCE=1000V;VBE=0 TC=125ae VEB=10V; IC=0 IC=1.2A ; VCE=5V 20 MIN 450 TYP. BUX81 SYMBOL VCEO(SUS) VCEsat-1 VCEsat-2 VBEsat-1 VBEsat-2 ICES IEBO hFE fT COB MAX UNIT V 1.5 3.0 1.4 1.8 1.0 3.0 10 V V V V mA mA Transition frequency Switching times ton ts tf CHA IN Turn-on time Storage time Fall time Output capacitance E SEM NG IC=0.5A ; VCE=10V IE=0 ; VCB=20V;f=0.1MHz OND IC TOR UC 8 105 MHz pF 0.5 IC=5A ;IB1=1A; IB2=-2A VCC=250V 3.5 0.8 |I |I |I s s s 2 Inchange Semiconductor Product Specification Silicon NPN Power Transistors PACKAGE OUTLINE BUX81 CHA IN E SEM NG OND IC TOR UC Fig.2 Outline dimensions 3 |
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